SI7812DN datasheet(5/14 Pages) VISHAY

Part #	SI7812DN

Description	N-Channel 75-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73332

S-83050-Rev. D, 29-Dec-08

www.vishay.com

5

Vishay Siliconix

Si7812DN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.2

1

10

30

0.00

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0246

8

10

ID = 7.2 A

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

0

30

50

10

20

Time (s)

40

10

1000

1

0.1

0.01

100

Safe Operating Area, Junction-to-Ambient

10

0.1

1

10

100

0.001

0.01

VDS - Drain-to-Source Voltage (V)

1

TA = 25 °C

Single Pulse

BVDSS Limited

100 µs

1 ms

100

* VGS

minimum VGS at which RDS(on) is specified

Limited by RDS(on)*

DC

10 ms

100 ms

10 s

1 s

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