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SI7772DP Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI7772DP Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page Vishay Siliconix Si7772DP www.vishay.com 4 Document Number: 65169 S09-1822-Rev. A, 14-Sep-09 New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C VSD -Source-to-Drain Voltage (V) 10-7 10-6 10-5 10-4 10-3 10-2 10-1 0 25 50 75 100 125 150 30 V 20 V 10 V TJ -Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 012 345 67 8 910 TJ = 25 °C ID =15 A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 16 32 48 64 80 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 100 ms Limited byRDS(on)* BVDSS Limited 1ms 10 ms 1s 10 s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
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