SI7308DN-T1-GE3 datasheet(4/13 Pages) VISHAY

Part #	SI7308DN-T1-GE3

Description	N-Channel 60-V (D-S) MOSFET

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Document Number: 73419

S-83051-Rev. B, 29-Dec-08

Vishay Siliconix

Si7308DN

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.4

1

10

20

0.0

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.04

0.05

0.06

0.07

0.08

0.09

0.10

0.11

0.12

2

345

6789

10

ID = 5.4 A

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

0

30

50

10

20

Time (s)

40

1

1000

0.1

0.001

10

100

0.01

Safe Operating Area

100

1

0.1

1

10

100

0.001

10

TA = 25 °C

Single Pulse

0.1

RDS(on)*

Limited by

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

0.01

1 ms

10 ms

100 ms

100 µs

DC

1 s

10 s

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SI7308DN-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix

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