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SI7288DP Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7288DP Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si7288DP New Product Document Number: 65366 S09-2113-Rev. A, 12-Oct-09 www.vishay.com 1 Dual N-Channel 40-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • PWM Optimized • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Backlight Inverter for LCD Displays • DC/DC Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) 40 0.019 at VGS = 10 V 20 4.9 0.022 at VGS = 4.5 V 19 D1 G1 S1 N-Channel MOSFET D2 G2 S2 N-Channel MOSFET Ordering Information: Si7288DP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 6.15 mm 5.15 mm Bottom View PowerPAK® SO-8 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 80 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 20 A TC = 70 °C 17 TA = 25 °C 10a, b TA = 70 °C 8.2a, b Pulsed Drain Current IDM 50 Source-Drain Current Diode Current TC = 25 °C IS 13 TA = 25 °C 3.0a, b Single Pulse Avalanche Current L = 0.1 mH IAS 10 Avalanche Energy EAS 5 mJ Maximum Power Dissipation TC = 25 °C PD 15.6 W TC = 70 °C 10 TA = 25 °C 3.6a, b TA = 70 °C 2.3a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambienta, e t ≤ 10 s RthJA 29 35 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 6.5 8.0 |
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