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SI7228DN-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI7228DN-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 64806 S09-0666-Rev. A, 20-Apr-09 www.vishay.com 3 Vishay Siliconix Si7228DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS =10 V thru 5 V VGS =2 V VGS =3 V VGS =4 V VDS - Drain-to-Source Voltage (V) 0.010 0.015 0.020 0.025 0.030 0.035 0 5 10 15 20 25 30 35 VGS =10 V VGS =4.5 V ID - Drain Current (A) 0 2 4 6 8 10 0 246 8 10 ID = 8.8 A VDS =24 V VDS =15 V VDS =10 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 200 400 600 800 0 5 10 15 20 25 30 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 ID = 8.8 A VGS =4.5 V VGS =10 V TJ -Junction Temperature (°C) |
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