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Q62702-A771 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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Q62702-A771 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 3 page BAW 79 A … BAW 79 D Semiconductor Group 2 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator: tp = 5 µs, D = 0.05 Oscillograph: R = 50 Ω tr = 0.6 ns, Rj = 50 Ω tr = 0.35 ns C ≤ 1pF Unit Values Parameter Symbol min. typ. max. DC characteristics V Breakdown voltage I(BR) = 100 µA BAW 79 A BAW 79 B BAW 79 C BAW 79 D V(BR) 50 100 200 400 – – – – – – – – µA Reverse current VR = VRmax VR = VRmax, TA = 150 ˚C IR – – – – 1 50 AC characteristics µs Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA trr –1– V Forward voltage1) IF = 1 A IF = 2 A VF – – – – 1.6 2 pF Diode capacitance VR = 0 V, f = 1 MHz CD –10 – 1) Pulse test: tp ≤ 300 µs, D = 2 %. |
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