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SI7115DN Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7115DN Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si7115DN SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 2 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −10 V 41 A VGS = −10 V, ID = −4A 0.244 0.245 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, ID = −3 A 0.258 0.260 Ω Forward Transconductance a gfs VDS = −15 V, ID = −4 A 6 12 S Diode Forward Voltage a VSD IS = −3 A, VGS = 0 V −0.82 −0.80 V Dynamic b Input Capacitance Ciss 1285 1190 Output Capacitance Coss 65 61 Reverse Transfer Capacitance Crss VDS = −50 V, VGS = 0 V, f = 1 MHz 50 42 pF VDS = −75 V, VGS = −10 V, ID = −3 A 23 27.5 Total Gate Charge Qg 16 23.2 Gate-Source Charge Qgs 5.4 5.4 Gate-Drain Charge Qgd VDS = −75 V, VGS = −6 V, ID = −3 A 8.4 8.4 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 74213 S-62686 Rev. A, 01-Jan-07 |
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