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SI5515CDC Datasheet(PDF) 8 Page - Vishay Siliconix |
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SI5515CDC Datasheet(HTML) 8 Page - Vishay Siliconix |
8 / 16 page www.vishay.com 8 Document Number: 68747 S10-0548-Rev. B, 08-Mar-10 Vishay Siliconix Si5515CDC P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 2 4 6 8 10 0 1234 5 VDS - Drain-to-Source Voltage (V) VGS =5 V thru 2 V VGS =1.5 V VGS =1 V 0.00 0.04 0.08 0.12 0.16 0.20 0 246 8 10 ID - Drain Current (A) VGS =1.8V VGS =2.5 V VGS =4.5 V 0 1 2 3 4 5 0 123 4567 8 Qg - Total Gate Charge (nC) ID =3.1 A VDS =10 V VDS =16 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.6 1.2 1.8 2.4 3.0 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 0 150 300 450 600 750 900 04 8 12 16 20 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =- 4.5 V,ID =- 3.1 A VGS = - 2.5 V,ID =- 2.8 A |
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