SI5402BDC datasheet(2/10 Pages) VISHAY

Part #	SI5402BDC

Description	N-Channel 30-V (D-S) MOSFET

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

2 / 10 page

www.vishay.com

2

Document Number: 73051

S-83054-Rev. B, 29-Dec-08

Vishay Siliconix

Si5402BDC

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS TJ = 25 °C, unless otherwise noted

SPECIFICATIONS

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 85 °C

5

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 4.9 A

0.029

0.035

Ω

VGS = 4.5 V, ID = 4.4 A

0.035

0.042

Forward Transconductancea

gfs

VDS = 10 V, ID = 4.9 A

19

S

Diode Forward Voltagea

VSD

IS = 1.1 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 4.9 A

10

20

nC

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

1.6

Gate Resistance

Rg

f = 1 MHz

14

Ω

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 15 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

10

15

ns

Rise Time

tr

10

15

Turn-Off Delay Time

td(off)

27

40

Fall Time

tf

10

15

Source-Drain Reverse Recovery Time

trr

IF = 1.1 A, dI/dt = 100 A/µs

20

60

Output Characteristics

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 thru 4 V

3 V

VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Similar Part No. - SI5402BDC

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI5402BDC	91Kb / 1P	Specification Comparison Si5402BDC vs. Si5402DC 10-May-05
	SI5402BDC	89Kb / 6P	N-Channel 30-V (D-S) MOSFET Rev. A, 09-Jun-04
	SI5402BDC-T1-E3	89Kb / 6P	N-Channel 30-V (D-S) MOSFET Rev. A, 09-Jun-04
	SI5402BDC	89Kb / 6P	N-Channel 30-V (D-S) MOSFET Rev. A, 09-Jun-04

More results

Similar Description - SI5402BDC

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI4894DY	129Kb / 3P	N-Channel 30-V (D-S) MOSFET 17-May-04
	SI4406DY	38Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. C, 26-May-03
	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12

More results

SI5402BDC Datasheet(PDF) 2 Page - Vishay Siliconix

SI5402BDC Datasheet(HTML) 2 Page - Vishay Siliconix

Similar Part No. - SI5402BDC

Similar Description - SI5402BDC

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL