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SI4916DY-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4916DY-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 3 Vishay Siliconix Si4916DY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica Turn-On Delay Time td(on) Channel-1 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Channel-2 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Ch-1 8 15 ns Ch-2 9 15 Rise Time tr Ch-1 11 18 Ch-2 13 20 Turn-Off Delay Time td(off) Ch-1 21 32 Ch-2 27 40 Fall Time tf Ch-1 6 10 Ch-2 9 15 Source-Drain Reverse Recovery Time trr IF = 1.3 A, dI/dt = 100 A/µs Ch-1 28 40 IF = 2.2 A, dI/dt = 100 µA/µs Ch-2 24 35 Body Diode Reverse Recovery Charge Qrr IF = 1.3 A, dI/dt = 100 A/µs Ch-1 17 nC IF = 2.2 A, dI/dt = 100 µA/µs Ch-2 12 Reverse Recovery Fall Time ta IF = 1.3 A, dI/dt = 100 A/µs Ch-1 12 ns IF = 2.2 A, dI/dt = 100 µA/µs Ch-2 11 Reverse Recovery Rise Time tb IF = 1.3 A, dI/dt = 100 A/µs Ch-1 16 IF = 2.2 A, dI/dt = 100 µA/µs Ch-2 13 SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Forward Voltage Drop VF IF = 1.0 A 0.47 0.50 V IF = 1.0 A, TJ = 125 °C 0.36 0.42 Maximum Reverse Leakage Current Irm VR = 30 V 0.004 0.100 mA VR = 30 V, TJ = 100 °C 0.7 10 VR = - 30 V, TJ = 125 °C 3.0 20 Junction Capacitance CT VR = 10 V 50 pF |
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