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SI4866BDY-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4866BDY-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4866BDY Document Number: 70341 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 1 N-Channel 12-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectifier • Point-of-Load Synchronous Buck Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 12 0.0053 at VGS = 4.5 V 21.5 29.5 nC 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4866BDY-T1-E3 (Lead (Pb)-free) Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) G D S D S D S D N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 90 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 21.5 A TC = 70 °C 17.2 TA = 25 °C 16.1b,c TA = 70 °C 12.9b,c Pulsed Drain Current IDM 50 Continuous Source-Drain Diode Current TC = 25 °C IS 4.0 TA = 25 °C 2.3b,c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 4.45 W TC = 70 °C 2.85 TA = 25 °C 2.50b,c TA = 70 °C 1.6b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb,d t ≤ 10 s RthJA 40 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 23 28 |
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