BAW56S datasheet(1/4 Pages) SIEMENS

Part #	BAW56S

Description	Silicon Switching Diode Array (For high-speed switching applications Common anode)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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BAW 56S

Semiconductor Group

Sep-07-1998

1

Silicon Switching Diode Array

• For high-speed switching applications

• Common anode

• Internal (galvanic) isolated Diodes

in one package

VPS05604

6

3

1

5

4

2

Type

Marking Ordering Code

Package

Pin Configuration

A1s

Q62702-A1253

1/4 = C1 2/5 = C2 3/6 = A1/2 SOT-363

BAW 56S

Maximum Ratings

Parameter

Value

Symbol

Unit

V

VR

70

Diode reverse voltage

Peak reverse voltage

VRM

70

200

mA

Forward current

IF

A

IFS

Surge forward current, t = 1

µs

4.5

Total power dissipation,

TS = 85 °C

Ptot

250

mW

150

°C

Junction temperature

Tj

Storage temperature

Tstg

65 ...+150

Thermal Resistance

K/W

Junction - ambient

1)

RthJA

≤ 530

Junction - soldering point

RthJS

≤ 260

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group

1

1998-11-01

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