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BAW56S Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BAW56S Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page BAW 56S Semiconductor Group Sep-07-1998 1 Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal (galvanic) isolated Diodes in one package VPS05604 6 3 1 5 4 2 Type Marking Ordering Code Package Pin Configuration A1s Q62702-A1253 1/4 = C1 2/5 = C2 3/6 = A1/2 SOT-363 BAW 56S Maximum Ratings Parameter Value Symbol Unit V VR 70 Diode reverse voltage Peak reverse voltage VRM 70 200 mA Forward current IF A IFS Surge forward current, t = 1 µs 4.5 Total power dissipation, TS = 85 °C Ptot 250 mW 150 °C Junction temperature Tj Storage temperature Tstg 65 ...+150 Thermal Resistance K/W Junction - ambient 1) RthJA ≤ 530 Junction - soldering point RthJS ≤ 260 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 1998-11-01 |
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