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SI4630DY-T1-GE3 Datasheet(PDF) 6 Page - Vishay Siliconix |
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SI4630DY-T1-GE3 Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 10 page www.vishay.com 6 Document Number: 73685 S09-0138-Rev. C, 02-Feb-09 Vishay Siliconix Si4630DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73685. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 1000 10-1 10-4 100 0.2 0.1 0.05 0.02 Square Wave Pulse Duration (s) 1 0.1 0.01 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60 °C/W 3. TJM – TA = PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.2 Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 Single Pulse 0.02 10 0.05 |
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