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Si4559ADY-T1-E3 Datasheet(PDF) 8 Page - Vishay Siliconix |
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Si4559ADY-T1-E3 Datasheet(HTML) 8 Page - Vishay Siliconix |
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8 / 15 page  www.vishay.com 8 Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 Vishay Siliconix Si4559ADY P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 5 10 15 20 25 012 34 56 78 VGS = 10 thru 5 V VDS - Drain-to-Source Voltage (V) 3 V 4 V 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 5 10 15 20 25 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 3 6 9 12 15 VDS = 30 V ID = 3.1 A Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 5 10 15 20 25 0 123 456 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) Crss 0 200 400 600 800 1000 0 102030 405060 VDS - Drain-to-Source Voltage (V) Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 VGS = 10 V ID = 3.1 A TJ - Junction Temperature (°C) |
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