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SI4501BDY-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI4501BDY-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 15 page www.vishay.com 4 Document Number: 67441 S11-0245-Rev. A, 14-Feb-11 Vishay Siliconix Si4501BDY N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 V DS -Drain-to-Source Voltage (V) V GS = 10 V thru 4 V V GS = 2 V V GS = 3 V 0.010 0.012 0.014 0.016 0.018 0.020 0 8 16 24 32 40 I D - Drain Current (A) V GS = 4.5 V V GS = 10 V 0 2 4 6 8 10 0.0 3.4 6.8 10.2 13.6 17.0 Q g - Total Gate Charge (nC) V DS = 15 V V DS = 10 V V DS = 20 V I D = 10 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.6 1.2 1.8 2.4 3.0 V GS - Gate-to-Source Voltage (V) T C = 25 °C T C = 125 °C T C = - 55 °C 0 220 440 660 880 1100 0 6 12 18 24 30 V DS - Drain-to-Source Voltage (V) C iss C oss C rss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) I D = 10 A V GS = 10 V V GS = 4.5 V |
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