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SI4477DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4477DY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com Document Number: 65215 2 S09-1763-Rev. A, 14-Sep-09 SPICE Device Model Si4477DY Vishay Siliconix Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS SIMULATED DATA MEASURED DATA UNIT Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA 0.60 - V Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 18 A 0.0068 0.0051 Ω VGS = - 2.5 V, ID = - 14 A 0.0085 0.0085 Forward Transconductancea gfs VDS = - 10 V, ID = - 3.5 A 16 10 S Diode Forward Voltagea VSD IS = - 5 A - 0.69 - 0.75 V Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 4500 4600 pF Output Capacitance Coss 1010 980 Reverse Transfer Capacitance Crss 436 175 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 18 A 99 125 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 18 A 44 59 Gate-Source Charge Qgs 10 10 Gate-Drain Charge Qgd 19 19 |
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