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BAV99 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BAV99 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page Semiconductor Group 1 04.96 Silicon Switching Diode Array BAV 99 Features q For high-speed switching q Connected in series Maximum Ratings per Diode Type Ordering Code (tape and reel) Marking Package1) Pin Configuration BAV 99 Q68000-A549 A7s SOT-23 Parameter Symbol Values Unit Reverse voltage VR 70 V Forward current IF 200 mA Junction temperature Tj 150 ˚C Total power dissipation, TS =31˚C Ptot 330 mW Storage temperature range Tstg – 65 … + 150 Peak reverse voltage VRM 70 Surge forward current, t = 1 µs IFS 4.5 A 1) For detailed information see chapter Package Outlines. |
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