Document Number: 67583

S11-0860-Rev. A, 02-Mar-11

www.vishay.com

9

Vishay Siliconix

Si4340DDY

This document is subject to change without notice.

CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Reverse Current vs. Junction Temperature

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

V

T

T

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

- 50

- 25

0

255075

100

125

150

T

16V

20V

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.000

0.006

0.012

0.018

0.024

0.030

02468

10

V

T

T

I

0

16

32

48

64

80

0.001

0.01

0.1

1

10

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

0.1

1

10

100

0.01

0.1

1

10

100

V

* V

100 μs

100 ms

Limited by R

1 ms

I

T

Single Pulse

BVDSS Limited

10 ms

10 s

1 s

DC

I