SI4276DY-T1-GE3 datasheet(2/15 Pages) VISHAY

Part #	SI4276DY-T1-GE3

Description	Dual N-Channel 30 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 66599

S10-1289-Rev. A, 31-May-10

Vishay Siliconix

Si4276DY

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

Ch 1

30

V

VGS = 0 V, ID = 250 µA

Ch 2

30

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

Ch 1

29

mV/°C

ID = 250 µA

Ch 2

30

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

Ch 1

- 5.2

ID = 250 µA

Ch 2

- 4.4

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

Ch 1

1.2

2.5

V

VDS = VGS, ID = 250 µA

Ch 2

1.2

2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

Ch 1

100

nA

Ch 2

100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Ch 1

1

µA

VDS = 30 V, VGS = 0 V

Ch 2

1

VDS = 30 V, VGS = 0 V, TJ = 55 °C

Ch 1

10

VDS = 30 V, VGS = 0 V, TJ = 55 °C

Ch 2

10

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

Ch 1

10

A

VDS = 5 V, VGS = 10 V

Ch 2

10

Drain-Source On-State

Resistanceb

RDS(on)

VGS = 10 V, ID = 9.5 A

Ch 1

0.0127

0.0153

Ω

VGS = 10 V, ID = 6.8 A

Ch 2

0.0230

0.0280

VGS = 4.5 V, ID = 8.7 A

Ch 1

0.0146

0.0184

VGS = 4.5 V, ID = 6.1 A

Ch 2

0.0280

0.0340

Forward Transconductanceb

gfs

VDS = 15 V, ID = 9.5 A

Ch 1

43

S

VDS = 15 V, ID = 6.8 A

Ch 2

17

Dynamica

Input Capacitance

Ciss

Channel 1

VDS = 15 V, VGS = 0 V, f = 1 MHz

Channel 2

VDS = 15 V, VGS = 0 V, f = 1 MHz

Ch 1

1000

pF

Ch 2

366

Output Capacitance

Coss

Ch 1

215

Ch 2

82

Reverse Transfer Capacitance

Crss

Ch 1

85

Ch 2

45

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 9.5 A

Ch 1

17.2

26

nC

VDS = 15 V, VGS = 10 V, ID = 6.8 A

Ch 2

7.3

15

Channel 1

VDS = 15 V, VGS = 4.5 V, ID = 9.5 A

Channel 2

VDS = 15 V, VGS = 4.5 V, ID = 6.8 A

Ch 1

8.4

17

Ch 2

3.6

8

Gate-Source Charge

Qgs

Ch 1

3

Ch 2

1.1

Gate-Drain Charge

Qgd

Ch 1

2.6

Ch 2

1.3

Gate Resistance

Rg

f = 1 MHz

Ch 1

0.6

3.1

6.2

Ω

Ch 2

0.5

2.6

5.2

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