BAV170 datasheet(1/4 Pages) SIEMENS

Part #	BAV170

Description	Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Silicon Low Leakage Diode Array

BAV 170

Maximum Ratings

Type

Ordering Code

(tape and reel)

Marking

Package1)

Pin Configuration

BAV 170

Q62702-A920

JXs

SOT-23

Parameter

Symbol

Values

Unit

Reverse voltage

VR

70

V

Forward current

IF

200

mA

Junction temperature

Tj

150

˚C

Total power dissipation, TS =35˚C

Ptot

250

mW

Storage temperature range

Tstg

– 65 … + 150

Peak reverse voltage

VRM

70

Surge forward current,

t = 1 µs

IFS

4.5

A

Thermal Resistance

Junction - ambient2)

Rth JA

≤ 600

K/W

Junction - soldering point

Rth JS

≤ 460

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm

× 40 mm × 1.5 mm/6 cm2 Cu.

q

Low leakage applications

q

Medium speed switching times

q

Common cathode

5.91

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