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SI4200DY-T1-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4200DY-T1-GE3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4200DY Document Number: 66825 S10-2005-Rev. A, 06-Sep-10 www.vishay.com 1 Dual N-Channel 25 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter - Game Console - Notebook System Power PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) 25 0.025 at VGS = 10 V 8a 3.6 nC 0.030 at VGS = 4.5 V 7.9 D1 G1 D1 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 S1 S2 Ordering Information: Si4200DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ± 16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 8a A TC = 70 °C 6.9 TA = 25 °C 7.3b, c TA = 70 °C 5.8b, c Pulsed Drain Current (t = 300 µs) IDM 30 Continuous Source-Drain Diode Current TC = 25 °C IS 2.3 TA = 25 °C 1.7b, c Single Pulse Avalanche Current L = 0.1 mH IAS 12 Single Pulse Avalanche Energy EAS 7.2 mJ Maximum Power Dissipation TC = 25 °C PD 2.8 W TC = 70 °C 1.8 TA = 25 °C 2.0b, c TA = 70 °C 1.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 58 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 38 45 |
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