Q62702-A971 datasheet(2/3 Pages) SIEMENS

Part #	Q62702-A971

Description	Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

2

BAT 62

Electrical Characteristics per Diode

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

min.

typ.

Unit

Values

max.

Forward voltage

IF = 2 mA

VF

V

–

0.58

1

Diode capacitance

VR = 0, f = 1 MHz

CT

pF

–

0.35

0.6

Case capacitance

CC

–

0.1

–

Differential resistance

VR = 0, f = 10 kHz

R0

k

Ω

–

225

–

Series inductance

LS

nH

–2–

Reverse current

VR = 40 V

IR

µA

––10

Forward current IF = f (VF)

Forward current IF = f (TS; TA*)

*Package mounted on alumina

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