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SI1539CDL Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI1539CDL Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 16 page www.vishay.com 2 Document Number: 67469 S11-0238-Rev. A, 14-Feb-11 Vishay Siliconix Si1539CDL SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 30 V VGS = 0 V, ID = - 250 µA P-Ch - 30 VDS Temperature Coefficient V DS/TJ ID = 250 µA N-Ch 30 mV/°C ID = - 250 µA P-Ch - 18 VGS(th) Temperature Coefficient V GS(th)/TJ ID = 250 µA N-Ch - 3.6 ID = - 250 µA P-Ch 3.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1.2 2.5 V VDS = VGS, ID = - 250 µA P-Ch - 1.2 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch ± 100 nA P-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V N-Ch 1 µA VDS = - 30 V, VGS = 0 V P-Ch - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V N-Ch 2 A VDS = -5 V, VGS = - 10 V P-Ch - 1 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 0.6 A N-Ch 0.323 0.388 VGS = - 10 V, ID = - 0.4 A P-Ch 0.740 0.890 VGS = 4.5 V, ID = 0.1A N-Ch 0.437 0.525 VGS = - 4.5 V, ID = - 0.1 A P-Ch 1.4 1.7 Forward Transconductanceb gfs VDS = 15 V, ID = 0.6 A N-Ch 1.2 S VDS = - 15 V, ID = - 0.4 A P-Ch 0.6 Dynamica Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz N-Ch 28 pF P-Ch 34 Output Capacitance Coss N-Ch 10 P-Ch 12 Reverse Transfer Capacitance Crss N-Ch 5 P-Ch 7 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 0.6 A N-Ch 1 1.5 nC VDS = - 15 V, VGS = - 10 V, ID = - 0.4 A P-Ch 1.5 3 N-Channel VDS = 15 V, VGS = 4.5 V ID = 0.6 A P-Channel VDS = - 15 V, VGS = - 4.5 V, ID = - 0.4 A N-Ch 0.55 1.1 P-Ch 0.8 1.2 Gate-Source Charge Qgs N-Ch 0.2 P-Ch 0.4 Gate-Drain Charge Qgd N-Ch 0.2 P-Ch 0.35 Gate Resistance Rg f = 1 MHz N-Ch 0.7 3.7 7.4 P-Ch 1.7 8.3 16.6 |
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