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SI1441EDH Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI1441EDH Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com 4 Document Number: 66823 S10-1827-Rev. A, 09-Aug-10 Vishay Siliconix Si1441EDH New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 VGS = - 2.5 V; ID =- 4.4 A VGS =- 4.5 V; ID =- 5 A T J - Junction Temperature (°C) 0.02 0.04 0.06 0.08 0.10 123 4 5 ID =- 5 A TJ =25 °C TJ = 125 °C V GS - Gate-to-Source Voltage (V) 0 0.001 0.01 0.1 1 10 6 12 18 24 30 Time (s) Source-Drain Diode Forward Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.1 1 10 100 00.5 1.0 TJ = 25 °C TJ = 150 °C V SD - Source-to-Drain Voltage (V) 0.30 0.45 0.60 0.75 0.90 - 50 - 25 0 25 50 75 100 125 150 ID = - 250 μA T J - Temperature (°C) 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 1s,10s Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms DC 100 ms V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified |
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