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SI1401EDH Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI1401EDH Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 12 page  www.vishay.com 2 Document Number: 70080 S10-1537-Rev. A, 19-Jul-10 Vishay Siliconix Si1401EDH New Product Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 12 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 5.2 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 2.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 5 µA VDS = 0 V, VGS = ± 4.5 V ± 1 Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V - 1 VDS = - 12 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 15 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 5.5 A 0.028 0.034 VGS = - 2.5 V, ID = - 4.8 A 0.038 0.046 VGS = - 1.8 V, ID = - 1.4 A 0.053 0.070 VGS = - 1.5 V, ID = - 0.9 A 0.072 0.110 Forward Transconductancea gfs VDS = - 6 V, ID = - 5.5 A 16 S Dynamicb Total Gate Charge Qg VDS = - 6 V, VGS = - 8 V, ID = - 5.5 A 24 36 nC Gate-Source Charge VDS = - 6 V, VGS = - 4.5 V, ID = - 5.5 A 14.1 22 Qgs 1.9 Gate-Drain Charge Qgd 4 Gate Resistance Rg f = 1 MHz 0.08 0.42 0.84 k Turn-On Delay Time td(on) VDD = - 6 V, RL = 1.4 ID - 4.4 A, VGEN = - 4.5 V, Rg = 1 160 240 ns Rise Time tr 420 630 Turn-Off Delay Time td(off) 1325 1990 Fall Time tf 985 1480 Turn-On Delay Time td(on) VDD = - 6 V, RL = 1.4 ID - 4.4 A, VGEN = - 8 V, Rg = 1 72 110 Rise Time tr 210 320 Turn-Off Delay Time td(off) 2100 3150 Fall Time tf 1015 1525 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.3 A Pulse Diode Forward Current ISM - 25 Body Diode Voltage VSD IS = - 5.5 A, VGS = 0 V - 0.85 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C 27 50 ns Body Diode Reverse Recovery Charge Qrr 12 25 nC Reverse Recovery Fall Time ta 10 ns Reverse Recovery Rise Time tb 17 |
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