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SI1029X Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI1029X Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 10 page  Vishay Siliconix Si1029X Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 www.vishay.com 1 Complementary N- and P-Channel 60 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET® Power MOSFETs • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 1.40 P-Channel, 4 • Low Threshold: ± 2 V (typ.) • Fast Switching Speed: 15 ns (typ.) • Gate-Source ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits APPLICATIONS • Replace Digital Transistor, Level-Shifter • Battery Operated Systems • Power Supply Converter Circuits PRODUCT SUMMARY VDS (V) RDS(on) ()ID (mA) N-Channel 60 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 P-Channel - 60 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Marking Code: H Top View 3 1 D2 G2 S1 5 2 4 6 D1 S2 G1 SC-89 Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 60 - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 320 305 - 200 - 190 mA TA = 85 °C 230 220 - 145 - 135 Pulsed Drain Currentb IDM 650 - 650 Continuous Source Current (Diode Conduction)a IS 450 380 - 450 - 380 Maximum Power Dissipationa TA = 25 °C PD 280 250 280 250 mW TA = 85 °C 145 130 145 130 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V |
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