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MBRD660CTPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBRD660CTPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Document Number: 94314 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Schottky Rectifier, 2 x 3 A VS-MBRD650CTPbF, VS-MBRD660CTPbF Vishay Semiconductors FEATURES • Popular D-PAK outline • Center tap configuration • Small foot print, surface mountable • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION The VS-MBRD650CTPbF, VS-MBRD660CTPbF surface mount, center tap, Schottky rectifier series has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 2 x 3 A VR 50 V, 60 V VF at IF 0.65 V IRM 15 mA at 125 °C TJ max. 150 °C Diode variation Common cathode EAS 6 mJ Base common cathode Common cathode 2 4 13 Anode Anode D-PAK (TO-252AA) MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 6 A VRRM 50/60 V IFSM tp = 5 μs sine 490 A VF 3 Apk, TJ = 125 °C (per leg) 0.65 V TJ Range - 40 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRD650CTPbF VS-MBRD660CTPbF UNITS Maximum DC reverse voltage VR 50 60 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 per leg IF(AV) 50 % duty cycle at TC = 128 °C, rectangular waveform 3.0 A per device 6 Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 490 10 ms sine or 6 ms rect. pulse 75 Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1 A, L = 12 mH 6 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.6 A |
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