Q62702-A1006 datasheet(2/3 Pages) SIEMENS

Part #	Q62702-A1006

Description	Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 3 page

BAT 114-099R

Semiconductor Group

2

Thermal Resistance

(per diode)

Parameter

Symbol

Limit Values

Unit

Junction to soldering point

R

thJS

≤ 780

K/W

Junction to ambient1)

R

thJA

≤ 1020

K/W

1)

Mounted on alumina 15 mm

× 16.7 mm to 0.7 mm

Electrical Characteristics

(per diode;

T

A = 25 °C)

Parameter

Symbol

Limit Values

Unit

min. typ.

max.

Forward voltage

I

F = 1 mA

I

F = 10 mA

V

F

−

0.58

0.68

0.7

0.78

V

Forward voltage matching1)

I

F = 10 mA

∆V

F

−−

20

mV

Diode capacitance

V

R = 0 V, f = 1 MHz

C

T

−

0.25

−

pF

Forward resistance

I

F = 10 mA / 50 mA

R

F

−

5.5

−

Ω

1)

∆V

F is difference between lowest and highest VF in component.

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Q62702-A1006 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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