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Q62702-A1017 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q62702-A1017 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 3 page Semiconductor Group 326 01.97 Silicon Dual Schottky Diode BAT 114-099 ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped & reel) Pin Configuration Package1) BAT 114-099 S7 Q62702-A1017 SOT-143 1) Dimensions see chapter Package Outlines Maximum Ratings (per diode) Parameter Symbol Limit Values Unit Reverse voltage V R 4V Forward current I F 90 mA Operation temperature T op − 55 to + 150 °C Storage temperature T stg − 55 to + 150 °C Power dissipation, T S ≤ 70 °C P tot 100 mW Features • High barrier diode for balanced mixers, phase detectors and modulators |
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