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PMD10K80 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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PMD10K80 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION ·High DC current gain ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) ·Complement to type PMD11K80 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current -Continuous 12 A ICP Collector Current-Peak 20 A IB B Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 150 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn |
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