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| BAS28 |
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 SIEMENS
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BAS 28 Semiconductor Group 2 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 Oscillograph: R = 50 Ω tr = 0.6 ns, Rj = 50 Ω tr = 0.35 ns C ≤ 1pF Unit Values Parameter Symbol min. typ. max. DC characteristics V Breakdown voltage I(BR) = 100 µA V(BR) 85 – – µA Reverse current VR = 75 V VR = 25 V, TA = 150 ˚C VR = 75 V, TA = 150 ˚C IR – – – – – – 1 30 50 AC characteristics ns Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA trr ––6 mV Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VF – – – – – – – – 715 855 1000 1250 pF Diode capacitance VR = 0 V, f = 1 MHz CD ––2 |
