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MJ3001 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # MJ3001
Description  Silicon NPN Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ3001 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
MJ3000/3001
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
MJ3000
60
V(BR)CEO
Collector-emitter
breakdown voltage
MJ3001
IC=0.1A ;IB=0
80
V
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=20mA
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A; IB=50mA
4.0
V
VBE
Base-emitter on voltage
IC=5A ; VCE=3V
3.0
V
MJ3000
VCE=60V; RBE=1.0kΩ
TC=150℃
1.0
5.0
ICER
Collector cut-off current
MJ3001
VCE=80V; RBE=1.0kΩ
TC=150℃
1.0
5.0
mA
MJ3000
VCE=30V; IB=0
ICEO
Collector cut-off current
MJ3001
VCE=40V; IB=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.0
mA
hFE
DC current gain
IC=5A ; VCE=3V
1000
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
1.17
℃/W


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