Q62702-A919 datasheet(2/4 Pages) SIEMENS

Part #	Q62702-A919

Description	Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 4 page

BAS 116

Semiconductor Group

2

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Test circuit for reverse recovery time

Pulse generator:

tp = 5 µs, D = 0.05

Oscillograph:

R = 50

Ω

tr = 0.6 ns, Rj = 50

Ω

tr = 0.35 ns

C

≤ 1pF

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

V

Breakdown voltage

I(BR) = 100

µA

V(BR)

75

–

nA

Reverse current

VR = 75 V

VR = 75 V, TA = 150 ˚C

IR

–

5

80

AC characteristics

µs

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100

Ω

measured at IR = 1 mA

trr

–

0.5

3

mV

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

VF

–

900

1000

1100

1250

pF

Diode capacitance

VR = 0 V, f = 1 MHz

CD

–2–

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Q62702-A919 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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