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SIHL530STRR-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHL530STRR-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91342 2 S11-1055-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRL530S, SiHL530S Vishay Siliconix Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to Ambient (PCB RthJA -40 Maximum Junction-to-Case (Drain) RthJC -1.7 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 100 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.14 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 9.0 Ab - - 0.16 VGS = 4.0 V ID = 7.5 Ab - - 0.22 Forward Transconductance gfs VDS = 50 V, ID = 9.0 Ab 6.4 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 -930 - pF Output Capacitance Coss -250 - Reverse Transfer Capacitance Crss -57 - Total Gate Charge Qg VGS = 5.0 V ID = 15 A, VDS = 80 V, see fig. 6 and 13b -- 28 nC Gate-Source Charge Qgs -- 3.8 Gate-Drain Charge Qgd -- 14 Turn-On Delay Time td(on) VDD = 50 V, ID = 15 A, Rg = 12 , RD = 32, see fig. 10b -4.7 - ns Rise Time tr -100 - Turn-Off Delay Time td(off) -22 - Fall Time tf -48 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 15 A Pulsed Diode Forward Currenta ISM -- 60 Body Diode Voltage VSD TJ = 25 °C, IS = 15 A, VGS = 0 Vb -- 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 15 A, dI/dt = 100 A/μsb - 150 200 ns Body Diode Reverse Recovery Charge Qrr - 0.93 1.4 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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