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IRFR024TRPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRFR024TRPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Document Number: 91264 www.vishay.com S10-1122-Rev. C, 10-May-10 1 Power MOSFET IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Surface Mount (IRFR024, SiHFR024) • Straight Lead (IRFU024, SiHFU024) • Available in Tape and Reel •Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 Ω, IAS = 14 A (see fig. 12). c. ISD ≤ 17 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω)VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) G D S S D G D ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR024-GE3 SiHFR024TR-GE3 SiHFR024TRL-GE3 SiHFU024-GE3 Lead (Pb)-free IRFR024PbF IRFR024TRPbFa -IRFU024PbF SiHFR024-E3 SiHFR024T-E3a - SiHFU024-E3 SnPb IRFR024 IRFR024TRa IRFR024TRLa IRFU024 SiHFR024 SiHFR024Ta SiHFR024TLa SiHFU024 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 14 A TC = 100 °C 9.0 Pulsed Drain Currenta IDM 56 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 91 mJ Maximum Power Dissipation TC = 25 °C PD 42 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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