BUX81 datasheet(2/3 Pages) ISC

Part #	BUX81

Description	Silicon NPN Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

2

Silicon NPN Power Transistors

BUX81

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.1A; L=25mH

450

V

VCEsat-1

Collector-emitter saturation voltage

IC=5 A;IB=1 A

1.5

V

VCEsat-2

Collector-emitter saturation voltage

IC=8 A;IB=2.5 A

3.0

V

VBEsat-1

Base-emitter saturation voltage

IC=5 A;IB=1 A

1.4

V

VBEsat-2

Base-emitter saturation voltage

IC=8 A;IB=2.5 A

1.8

V

ICES

Collector cut-off current

VCE=1000V;VBE=0

TC=125℃

1.0

3.0

mA

IEBO

Emitter cut-off current

VEB=10V; IC=0

10

mA

hFE

DC current gain

IC=1.2A ; VCE=5V

20

fT

Transition frequency

IC=0.5A ; VCE=10V

8

MHz

COB

Output capacitance

IE=0 ; VCB=20V;f=0.1MHz

105

pF

Switching times

ton

Turn-on time

0.5

μs

ts

Storage time

3.5

μs

tf

Fall time

IC=5A ;IB1=1A; IB2=-2A

VCC=250V

0.8

μs

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