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BUW13F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part No. BUW13F
Description  Silicon NPN Power Transistors
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW13F BUW13AF
DESCRIPTION
・With TO-3PFa package
・High voltage;high speed
APPLICATIONS
・Converters
・Inverters
・Switching regulators
・Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
l
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
BUW13F
850
VCBO
Collector-base voltage
BUW13AF
Open emitter
1000
V
BUW13F
400
VCEO
Collector-emitter voltage
BUW13AF
Open base
450
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current
15
A
ICM
Collector current-peak
30
A
IB
Base current
6
A
IBM
Base current-peak
9
A
PT
Total power dissipation
TC=25℃
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
Thermal resistance from junction to ambient
35
K/W




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