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BUV40 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BUV40
Description  isc Silicon NPN Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV40 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV40
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L= 25mH
125
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5.5A; IB= 0.275A
0.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 11A ;IB= 1.1A
B
0.9
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 15A ;IB= 1.875A
1.2
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 11A ;IB= 1.1A
B
1.6
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 15A ;IB= 1.875A
1.9
V
ICER
Collector Cutoff Current
VCE= 250V;RBE= 10Ω
VCE= 250V;RBE= 10Ω;TC=100℃
1.0
5.0
mA
ICEV
Collector Cutoff Current
VCE= 250V;VBE= -1.5V
VCE= 250V;VBE= -1.5V;TC=100℃
1.0
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
Switching Times, Resistive Load
tr
Rise Time
1.0
μs
ts
Storage Time
1.0
μs
tf
Fall Time
IC= 15A; IB1= 1.8A; VCC= 100V;
RB2= 1.3Ω; VBB= -5V, tp= 30μs
0.3
μs
isc Website：www.iscsemi.cn


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