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Q62702-A1211 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q62702-A1211 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page BAR 63-02W Semiconductor Group Sep-07-1998 1 Silicon PIN Diode • PIN diode for high speed switching of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance • For frequencies up to 3 GHz 1 VES05991 2 Type Marking Ordering Code Pin Configuration Package BAR 63-02W G Q62702-A1211 1 = C 2 = A SCD-80 Maximum Ratings Parameter Value Symbol Unit Diode reverse voltage V 50 VR Forward current 100 IF mA Total power dissipation, TS = 115 °C Ptot mW 250 Junction temperature Tj °C 150 Operating temperature range Top -55 ...+150 °C Storage temperature Tstg -55 ...+150 Thermal Resistance Junction - ambient 1) RthJA ≤ 220 K/W Junction - soldering point RthJS ≤ 140 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 1998-11-01 |
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