BAR63-03W datasheet(2/4 Pages) SIEMENS

Part #	BAR63-03W

Description	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 4 page

BAR 63-03W

Semiconductor Group

2

Edition A01, 22.07.94

Electrical Characteristics

at

TA = 25

°C, unless otherwise specified.

Parameter

Symbol

Value

Unit

min.

typ.

max.

DC Characteristics

Breakdown voltage

IR = 5

µA

V(BR)

50

-

V

Reverse leakage

VR = 20 V

IR

--50

nA

Forward voltage

IF = 100 mA

VF

-

0.95

1.2

V

Diode capacitance

VR = 0 V, f = 100 MHz

CT

-

0.3

-

pF

Diode capacitance

VR = 5 V, f = 1 MHz

CT

-

0.21

0.3

pF

Forward resistance

IF = 5 mA, f = 100 MHz

IF = 10 mA, f = 100 MHz

rf

-

1.2

1

2

-

Ω

Charge carrier lifetime

IF = 10 mA, IR = 6 mA, IR = 3 mA

τL

-75

-

ns

Series inductance

Ls

-

2.0

-

nH

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BAR63-03W Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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