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HFA04TB60SPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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HFA04TB60SPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 94036 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 19-Feb-10 1 HEXFRED® Ultrafast Soft Recovery Diode, 4 A VS-HFA04TB60SPbF Vishay High Power Products FEATURES • Ultrafast recovery • Ultrasoft recovery • Very low IRRM • Very low Qrr • Specified at operating temperature • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified BENEFITS • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION VS-HFA04TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A continuous current, the VS-HFA04TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA04TB60S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR 600 V VF at 4 A at 25 °C 1.8 V IF(AV) 4 A trr (typical) 17 ns TJ (maximum) 150 °C Qrr at 125 °C 40 nC dI(rec)M/dt at 125 °C 280 A/μs D2PAK Anode 1 3 2 N/C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage VR 600 V Maximum continuous forward current IF TC = 100 °C 4 A Single pulse forward current IFSM 25 Maximum repetitive forward current IFRM 16 Maximum power dissipation PD TC = 25 °C 25 W TC = 100 °C 10 Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C |
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