GSOT36-GS08 datasheet(6/8 Pages) VISHAY

Part #	GSOT36-GS08

Description	Single-Line ESD-Protection in SOT-23

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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6 / 8 page

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For technical questions, contact: ESDprotection@vishay.com

Document Number: 85807

6

Rev. 2.0, 22-Jul-10

GSOT03 to GSOT36

Vishay Semiconductors

Single-Line ESD-Protection in

SOT-23

Note

• BiAs mode (between pin 3 and pin 1)

Note

• BiAs mode (between pin 3 and pin 1)

Note

• BiAs mode (between pin 3 and pin 1)

ELECTRICAL CHARACTERISTICS GSOT12

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 1 μA

VRWM

12

-

V

Reverse current

at VR = 12 V

IR

--

1

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

13.5

15

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-

15.4

18.7

V

at IPP = IPPM = 12 A

-

21.2

26

V

Forward clamping voltage

at IPP = 1 A

VF

-1

1.2

V

at IPP = IPPM = 12 A

-

2.2

-

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-

115

150

pF

at VR = 6 V; f = 1 MHz

-

50

-

pF

ELECTRICAL CHARACTERISTICS GSOT15

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 1 μA

VRWM

15

-

V

Reverse current

at VR = 15 V

IR

--

1

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

16.5

18

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-

19.4

23.5

V

at IPP = IPPM = 8 A

-

24.8

28.8

V

Forward clamping voltage

at IPP = 1 A

VF

-1

1.2

V

at IPP = IPPM = 8 A

-

1.8

-

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-90

120

pF

at VR = 7.5 V; f = 1 MHz

-

35

-

pF

ELECTRICAL CHARACTERISTICS GSOT24

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 1 μA

VRWM

24

-

V

Reverse current

at VR = 24 V

IR

--

1

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

27

30

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-34

41

V

at IPP = IPPM = 5 A

-

41

47

V

Forward clamping voltage

at IPP = 1 A

VF

-1

1.2

V

at IPP = IPPM = 5 A

-

1.4

-

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-65

80

pF

at VR = 12 V; f = 1 MHz

-

20

-

pF

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