GSOT12-V-G-08 datasheet(4/8 Pages) VISHAY

Part #	GSOT12-V-G-08

Description	Single-Line ESD-Protection in SOT-23

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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For technical questions, contact: ESDprotection@vishay.com

Document Number: 85807

4

Rev. 2.0, 22-Jul-10

GSOT03 to GSOT36

Vishay Semiconductors

Single-Line ESD-Protection in

SOT-23

BiAs-MODE (1-line bidirectional asymmetrical protection mode)

With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground

and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line

is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1

and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch.

As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode

becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The

clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance

(resistance and inductance) of the protection device.

Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of

the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.

Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and

asymmetrical (BiAs).

Note

• BiAs mode (between pin 3 and pin 1)

ABSOLUTE MAXIMUM RATINGS GSOT36

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Peak pulse current

Pin 3 to 1

acc. IEC 61000-4-5, tp = 8/20 μs; single shot

IPPM

3.5

A

Peak pulse power

Pin 3 to 1

acc. IEC 61000-4-5, tp = 8/20 μs; single shot

PPP

248

W

ESD immunity

Contact discharge acc. IEC 61000-4-2; 10 pulses

VESD

± 30

kV

Air discharge acc. IEC 61000-4-2; 10 pulses

± 30

kV

Operating temperature

Junction temperature

TJ

- 40 to + 125

°C

Storage temperature

TSTG

- 55 to + 150

°C

20422

L1

1

2

3

Ground

BiAs

ELECTRICAL CHARACTERISTICS GSOT03

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 100 μA

VRWM

3.3

-

V

Reverse current

at VR = 3.3 V

IR

--

100

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

44.6

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-5.7

7.5

V

at IPP = IPPM = 30 A

-

10

12.3

V

Forward clamping voltage

at IPP = 1 A

VF

-1

1.2

V

at IPP = IPPM = 30 A

-

4.5

-

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-

420

600

pF

at VR = 1.6 V; f = 1 MHz

-

260

-

pF

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GSOT12-V-G-08 Datasheet(PDF) 4 Page - Vishay Siliconix

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