GSOT03-GS08 datasheet(5/8 Pages) VISHAY

Part #	GSOT03-GS08

Description	Single-Line ESD-Protection in SOT-23

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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5 / 8 page

Document Number: 85807

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

Rev. 2.0, 22-Jul-10

5

GSOT03 to GSOT36

Single-Line ESD-Protection in

SOT-23

Vishay Semiconductors

Note

• BiAs mode (between pin 3 and pin 1)

Note

• BiAs mode (between pin 3 and pin 1)

Note

• BiAs mode (between pin 3 and pin 1)

ELECTRICAL CHARACTERISTICS GSOT04

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 20 μA

VRWM

4-

-

V

Reverse current

at VR = 4 V

IR

-

20

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

56.1

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-7.5

9

V

at IPP = IPPM = 30 A

-

11.2

14.3

V

Forward clamping voltage

at IPP = 1 A

VF

-1

1.2

V

at IPP = IPPM = 30 A

-

4.5

-

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-

310

450

pF

at VR = 2 V; f = 1 MHz

-

200

-

pF

ELECTRICAL CHARACTERISTICS GSOT05

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 10 μA

VRWM

5-

-

V

Reverse current

at VR = 5 V

IR

-

10

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

66.8

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-7

8.7

V

at IPP = IPPM = 30 A

-

12

16

V

Forward clamping voltage

at IPP = 1 A

VF

-1

1.2

V

at IPP = IPPM = 30 A

-

4.5

-

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-

260

350

pF

at VR = 2.5 V; f = 1 MHz

-

150

-

pF

ELECTRICAL CHARACTERISTICS GSOT08

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 5 μA

VRWM

8-

-

V

Reverse current

at VR = 8 V

IR

--

5

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

910

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-

10.7

13

V

at IPP = IPPM = 18 A

-

15.2

19.2

V

Forward clamping voltage

at IPP = 1 A

VF

-1

1.2

V

at IPP = IPPM = 18 A

-

3

-

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-

160

250

pF

at VR = 4 V; f = 1 MHz

-

80

-

pF

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