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GSOT05C Datasheet(PDF) 9 Page - Vishay Siliconix |
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GSOT05C Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 12 page Document Number: 85824 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 2.0, 22-Jul-10 9 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT08C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel -- 1 lines Reverse working voltage at IR = 5 μA VRWM 8.5 - - V Reverse current at VR = 8.5 V IR -- 5 μA Reverse breakdown voltage at IR = 1 mA VBR 9.5 10.7 - V Reverse clamping voltage at IPP = 1 A VC - 11.7 14 V at IPP = IPPM = 18 A - 18.5 22.2 V Capacitance at VR = 0 V; f = 1 MHz CD - 80 125 pF at VR = 4 V; f = 1 MHz - 60 - pF ELECTRICAL CHARACTERISTICS GSOT12C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel -- 1 lines Reverse working voltage at IR = 1 μA VRWM 12.5 - - V Reverse current at VR = 12.5 V IR -- 1 μA Reverse breakdown voltage at IR = 1 mA VBR 13.5 15.7 - V Reverse clamping voltage at IPP = 1 A VC - 16.4 19.7 V at IPP = IPPM = 12 A - 23.4 28.1 V Capacitance at VR = 0 V; f = 1 MHz CD -58 75 pF at VR = 7.5 V; f = 1 MHz - 36 - pF ELECTRICAL CHARACTERISTICS GSOT15C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel -- 1 lines Reverse working voltage at IR = 1 μA VRWM 15.5 - - V Reverse current at VR = 15.5 V IR -- 1 μA Reverse breakdown voltage at IR = 1 mA VBR 17 18.7 - V Reverse clamping voltage at IPP = 1 A VC - 20.4 24.5 V at IPP = IPPM = 8 A - 26.6 30.6 V Capacitance at VR = 0 V; f = 1 MHz CD -45 60 pF at VR = 7.5 V; f = 1 MHz - 25 - pF ELECTRICAL CHARACTERISTICS GSOT24C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel -- 1 lines Reverse working voltage at IR = 1 μA VRWM 24.5 - - V Reverse current at VR = 24.5 V IR -- 1 μA Reverse breakdown voltage at IR = 1 mA VBR 27.5 30.7 - V Reverse clamping voltage at IPP = 1 A VC -34 41 V at IPP = IPPM = 5 A - 40 48 V Capacitance at VR = 0 V; f = 1 MHz CD -33 40 pF at VR = 12 V; f = 1 MHz - 18 - pF |
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