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BU2520DF Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part No. BU2520DF
Description  Silicon NPN Power Transistors
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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 2 page
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BU2520DF
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
13.5
V
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=1.2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A
1.1
V
ICES
Collector cut-off current
VCE=BVCES; VBE=0
TC=125℃
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
100
300
mA
hFE-1
DC current gain
IC=1.0A ; VCE=5V
13
hFE-2
DC current gain
IC=6A ; VCE=5V
5
7
9.5
VF
Diode forward voltage
IF=6A
2.2
V
CC
Collector capacitance
f=1MHz;VCB=10V
115
pF




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