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GI816 Datasheet(PDF) 1 Page - Vishay Siliconix |
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GI816 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page  Document Number: 88628 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Glass Passivated Junction Fast Switching Rectifier GI810 thru GI818 Vishay General Semiconductor FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For general purpose of medium frequency rectification. MECHANICAL DATA Case: DO-204AC, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 750 ns IR 10 μA VF 1.2 V TJ max. 175 °C DO-204AC (DO-15) SUPERECTIFIER ® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GI810 GI811 GI812 GI814 GI816 GI817 GI818 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA= 75 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL GI810 GI811 GI812 GI814 GI816 GI817 GI818 UNIT Maximum instantaneous forward voltage 1.0 A VF 1.2 V Maximum DC reverse current at rated DC blocking voltage TA= 25 °C IR 10 μA TA= 100 °C 100 Maximum reverse recovery time IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs trr 750 ns Typical junction capacitance 4.0 V, 1 MHz CJ 25 pF |
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