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BU999 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU999 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU999 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 140 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 25A; IB= 2.5A 2.5 V VBE(on) Base -Emitter On Voltage IC= 10A; VCE= 2V 1.8 V ICEX Collector Cutoff Current VCE= 140V; VBE= -1.5V 10 μA ICBO Collector Cutoff Current VCB= 160V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 70V; IB= 0 B 50 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 2V 35 hFE-2 DC Current Gain IC= 10A; VCE= 2V 25 100 hFE-3 DC Current Gain IC= 25A; VCE= 2V 12 Switching times ton Turn-on Time 0.3 μs tstg Storage Time 1.5 μs tf Fall Time IC= 10A, IB1= -IB2= 1A, VCC= 80V 0.25 μs isc Website:www.iscsemi.cn 2 |
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