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BU508AFI Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU508AFI Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU508AFI CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0, 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2 A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2 A 1.3 V hFE DC current gain IC=1A; VCE=5V 8 ICES Collector cut-off current VCE=1500V; VBE=0 TC=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA fT Transition frequency IC=0.1A; VCE=5V;f=5MHz 7 MHz ts Storage time 7 μs tf Fall time IC=4.5A ; VCC=140V IB=1.8A; LC=0.9mH LB=3μH 0.55 μs |
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