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BU207 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BU207
Description  isc Silicon NPN Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU207 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU207
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0
600
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4.5A; IB= 2A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2A
1.5
V
ICES
Collector Cutoff Current
VCE= 1300V; VBE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5.0V; IC= 0
10
mA
hFE
DC Current Gain
IC= 4.5A; VCE= 5V
2.25
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
125
pF
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V; ftest= 1MHz
4
MHz
tf
Fall Time
IC= 4.5A; IB= 1.8A; LB= 10μH
1.0
μs
isc Website：www.iscsemi.cn
2


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